Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US14014231Application Date: 2013-08-29
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Publication No.: US08947918B2Publication Date: 2015-02-03
- Inventor: Katsuyuki Fujita
- Applicant: Katsuyuki Fujita
- Agency: Holtz, Holtz, Goodman & Chick PC
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
According to one embodiment, a semiconductor memory device includes a memory cell array, a buffer configured to hold data input to an input/output circuit and to hold data read from the memory cell array, and a controller configured to receive a first command and an address from the outside and to read data, in response to the first command, from a memory cell group coupled to a selected word line designated by the address to the buffer. The controller receives a second command which is input after the first command and indicates a last command of a group of commands including write commands and/or read commands, and starts a write operation from the buffer to the memory cell array in response to the second command.
Public/Granted literature
- US20140286087A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-09-25
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