Invention Grant
US08947933B2 Nonvolatile semiconductor memory apparatus 有权
非易失性半导体存储装置

Nonvolatile semiconductor memory apparatus
Abstract:
According to one embodiment, a nonvolatile semiconductor memory apparatus includes a memory cell array, a row decoder, a controller. The memory cell array includes a plurality of memory strings. The memory strings include a first select transistor and a second select transistor, and are connected to each of a plurality of bit lines. The row decoder applies a voltage to the first and second select transistors. The controller detects a defect of the bit lines based on data read from the memory cells.
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