Invention Grant
- Patent Title: Nonvolatile semiconductor memory apparatus
- Patent Title (中): 非易失性半导体存储装置
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Application No.: US13913024Application Date: 2013-06-07
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Publication No.: US08947933B2Publication Date: 2015-02-03
- Inventor: Naoya Tokiwa , Yasushi Nagadomi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2012-224296 20121009
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/04

Abstract:
According to one embodiment, a nonvolatile semiconductor memory apparatus includes a memory cell array, a row decoder, a controller. The memory cell array includes a plurality of memory strings. The memory strings include a first select transistor and a second select transistor, and are connected to each of a plurality of bit lines. The row decoder applies a voltage to the first and second select transistors. The controller detects a defect of the bit lines based on data read from the memory cells.
Public/Granted literature
- US20140098609A1 NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2014-04-10
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