Invention Grant
- Patent Title: Integrated circuit and apparatuses including the same
- Patent Title (中): 集成电路及其装置
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Application No.: US13835780Application Date: 2013-03-15
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Publication No.: US08947935B2Publication Date: 2015-02-03
- Inventor: Eui-Seung Kim , Ji-Sung Kim
- Applicant: SAMSUNG Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee: SAMSUNG Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Elsworth IP Group PLLC
- Priority: KR10-2012-0057256 20120530
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C7/12 ; G11C16/24

Abstract:
An integrated includes a memory cell, a bit line connected to the memory cell, a boosting circuit to boost the bit line up to a boosting voltage during a pre-charge operation pre-charging the bit line, and a regulation circuit connected between the bit line and an output terminal and determines a logic level of the output terminal according to the voltage of the bit line.
Public/Granted literature
- US20130322177A1 INTEGRATED CIRCUIT AND APPARATUSES INCLUDING THE SAME Public/Granted day:2013-12-05
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