Invention Grant
US08947938B2 Two-transistor non-volatile memory cell and related program and read methods
有权
双晶体管非易失性存储单元及相关程序和读取方法
- Patent Title: Two-transistor non-volatile memory cell and related program and read methods
- Patent Title (中): 双晶体管非易失性存储单元及相关程序和读取方法
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Application No.: US13624291Application Date: 2012-09-21
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Publication No.: US08947938B2Publication Date: 2015-02-03
- Inventor: Te-Liang Lee , Chin-Yuan Ko , Ming-Yih Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
A memory device includes an N-channel transistor and a P-channel transistor. A word line is electrically connected to a drain terminal of the N-channel transistor, and a source terminal of the P-channel transistor. A first bit line is electrically connected to a source terminal of the N-channel transistor. A second bit line is electrically connected to a drain terminal of the P-channel transistor. Gate terminals of the N-channel transistor and the P-channel transistor are electrically connected and floating.
Public/Granted literature
- US20140085984A1 Two-Transistor Non-Volatile Memory Cell and Related Program and Read Methods Public/Granted day:2014-03-27
Information query
