A semiconductor device comprises an array of memory cells. Each of the memory cells includes a tunnel dielectric, a well region including a first current electrode and a second current electrode, and a control gate. The first and second current electrodes are adjacent one side of the tunnel dielectric and the control gate is adjacent another side of the tunnel dielectric. A controller is coupled to the memory cells. The controller includes logic to determine when to perform a healing process in the tunnel dielectric of the memory cells, and to apply a first voltage to the first current electrode of the memory cells during the healing process to remove trapped electrons and holes from the tunnel dielectric.