Invention Grant
- Patent Title: Leakage measurement systems
- Patent Title (中): 泄漏测量系统
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Application No.: US14084408Application Date: 2013-11-19
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Publication No.: US08947946B2Publication Date: 2015-02-03
- Inventor: Shigekazu Yamada
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C29/50 ; G11C29/02 ; G11C16/04 ; G11C16/00 ; G11C29/12

Abstract:
Described examples include leakage measurement systems and methods for measuring leakage current between a word line at a boosted voltage and a word line at a supply voltage. The boosted voltage may be generated by charge pump circuitry. Examples of leakage measurement systems described herein may be included in memory devices.
Public/Granted literature
- US20140071772A1 LEAKAGE MEASUREMENT SYSTEMS Public/Granted day:2014-03-13
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