Invention Grant
US08947956B2 Delay circuit and latency control circuit of memory, and signal delay method thereof
有权
存储器的延迟电路和延迟控制电路及其信号延迟方法
- Patent Title: Delay circuit and latency control circuit of memory, and signal delay method thereof
- Patent Title (中): 存储器的延迟电路和延迟控制电路及其信号延迟方法
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Application No.: US13302267Application Date: 2011-11-22
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Publication No.: US08947956B2Publication Date: 2015-02-03
- Inventor: Jeong-Tae Hwang
- Applicant: Jeong-Tae Hwang
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0037208 20110421
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A delay circuit includes a delay unit configured to generate a delayed transfer signal by delaying a transfer signal corresponding to a first signal or a second signal, a distinguishment signal generation unit configured to generate a distinguishment signal which represents to what signal the transfer signal correspond between the first signal and the second signal and a delayed signal generation unit configured to output the delayed transfer signal as a first delayed signal or a second delayed signal in response to the distinguishment signal.
Public/Granted literature
- US20120269017A1 DELAY CIRCUIT AND LATENCY CONTROL CIRCUIT OF MEMORY, AND SIGNAL DELAY METHOD THEREOF Public/Granted day:2012-10-25
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