A method for repairing a memory includes running a built-in self-test of the memory to find faulty bits. A first repair result using a redundant row block is calculated. A second repair result using a redundant column block is calculated. The first repair result and the second repair result are compared. A repair method using either the redundant row block or the redundant column block is selected. The memory is repaired by replacing a row block having at least one faulty bit with the redundant row block or replacing a column block having at least one faulty bit with the redundant column block.