Invention Grant
US08948212B2 Memory controller with circuitry to set memory device-specific reference voltages
有权
存储器控制器,具有设置存储器特定参考电压的电路
- Patent Title: Memory controller with circuitry to set memory device-specific reference voltages
- Patent Title (中): 存储器控制器,具有设置存储器特定参考电压的电路
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Application No.: US14154068Application Date: 2014-01-13
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Publication No.: US08948212B2Publication Date: 2015-02-03
- Inventor: Jared LeVan Zerbe , Kevin S. Donnelly , Stefanos Sidiropoulos , Donald C. Stark , Mark A. Horowitz , Leung Yu , Roxanne Vu , Jun Kim , Bruno W. Garlepp , Tsyr-Chyang Ho , Benedict Chung-Kwong Lau
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F1/10 ; G06F13/16 ; G06F13/42 ; H04L7/00 ; H04L7/033

Abstract:
An integrated circuit device includes a transmitter circuit operable to transmit a timing signal over a first wire to a DRAM. The DRAM receives a first signal having a balanced number of logical zero-to-one transitions and one-to-zero transitions and samples the first signal at a rising edge of the timing signal to produce a respective sampled value. The device further includes a receiver circuit to receive the respective sampled value from the DRAM over a plurality of wires separate from the first wire. In a first mode, the transmitter circuit repeatedly transmits incrementally offset versions of the timing signal to the DRAM until sampled values received from the DRAM change from a logical zero to a logical one or vice versa; and in a second mode, it transmits write data over the plurality of wires to the DRAM according to a write timing offset generated based on the sampled values.
Public/Granted literature
- US20140229667A1 Memory System with Calibrated Data Communication Public/Granted day:2014-08-14
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