Invention Grant
US08948226B2 Semiconductor device and method for producing light and laser emission
有权
用于产生光和激光发射的半导体器件和方法
- Patent Title: Semiconductor device and method for producing light and laser emission
- Patent Title (中): 用于产生光和激光发射的半导体器件和方法
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Application No.: US13958522Application Date: 2013-08-02
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Publication No.: US08948226B2Publication Date: 2015-02-03
- Inventor: John Dallesasse , Milton Feng
- Applicant: The Board of Trustees of The University of Illinois
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of The University of Illinois
- Current Assignee: The Board of Trustees of The University of Illinois
- Current Assignee Address: US IL Urbana
- Agent Martin Novack
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/062 ; H01S5/22 ; H01S5/343 ; H01S5/02

Abstract:
A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.
Public/Granted literature
- US20140050241A1 Semiconductor Device And Method For Producing Light And Laser Emission Public/Granted day:2014-02-20
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