Systems and methods are provided for initiating wear leveling on block-aligned boundaries for non-volatile memories (“NVMs”), such as flash memory. In some embodiments, an electronic device including the NVM may suspend the programming of data upon reaching the end of a dynamic block. The electronic device may then perform wear leveling on a low-cycled block of the NVM. The electronic device may thus be configured to copy static data from the low-cycled block to another block of the NVM. After wear leveling has completed, the memory interface can program a second portion of the data to a new dynamic block of the NVM. This way, the electronic device can improve the efficiency of garbage collection. In addition, the electronic device can decrease the programming time for user generated writes, the wearing of the NVM, and overall power consumption.