Invention Grant
- Patent Title: Nonvolatile semiconductor storage system
- Patent Title (中): 非易失性半导体存储系统
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Application No.: US13379223Application Date: 2011-09-30
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Publication No.: US08949511B2Publication Date: 2015-02-03
- Inventor: Atsushi Ishikawa , Koji Sonoda , Go Uehara , Junji Ogawa , Hideyuki Koseki
- Applicant: Atsushi Ishikawa , Koji Sonoda , Go Uehara , Junji Ogawa , Hideyuki Koseki
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- International Application: PCT/JP2011/072653 WO 20110930
- International Announcement: WO2013/046463 WO 20130404
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F13/16 ; G06F3/06

Abstract:
A nonvolatile semiconductor storage system has multiple nonvolatile semiconductor storage media, a control circuit having a media interface group (one or more interface devices) coupled to the multiple nonvolatile semiconductor storage media, and multiple switches. The media interface group and the multiple switches are coupled via data buses, and each switch and each of two or more nonvolatile chips are coupled via a data bus. The switch is configured so as to switch a coupling between a data bus coupled to the media interface group and a data bus coupled to any of multiple nonvolatile chips that are coupled to this switch. The control circuit partitions write-target data into multiple data elements, switches a coupling by controlling the multiple switches, and distributively sends the multiple data elements to multiple nonvolatile chips.
Public/Granted literature
- US20130086305A1 NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM Public/Granted day:2013-04-04
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