Invention Grant
US08951342B2 Methods for using porogens for low k porous organosilica glass films
有权
使用致孔剂用于低k多孔有机硅玻璃膜的方法
- Patent Title: Methods for using porogens for low k porous organosilica glass films
- Patent Title (中): 使用致孔剂用于低k多孔有机硅玻璃膜的方法
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Application No.: US13286634Application Date: 2011-11-01
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Publication No.: US08951342B2Publication Date: 2015-02-10
- Inventor: Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Mary Kathryn Haas
- Applicant: Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Mary Kathryn Haas
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian
- Main IPC: C09D7/12
- IPC: C09D7/12 ; C23C16/40 ; H01L21/02 ; H01L21/316 ; C23C16/30 ; C23C16/56 ; C03C1/00 ; C23C30/00

Abstract:
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.
Public/Granted literature
- US20120282415A1 Methods For Using Porogens For Low K Porous Organosilica Glass Films Public/Granted day:2012-11-08
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