Invention Grant
- Patent Title: Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
- Patent Title (中): 用于提升硅单晶的硅玻璃坩埚及其制造方法
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Application No.: US12632970Application Date: 2009-12-08
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Publication No.: US08951346B2Publication Date: 2015-02-10
- Inventor: Kazuhiro Harada , Masaki Morikawa , Satoshi Kudo
- Applicant: Kazuhiro Harada , Masaki Morikawa , Satoshi Kudo
- Applicant Address: JP Akita
- Assignee: Japan Super Quartz Corporation
- Current Assignee: Japan Super Quartz Corporation
- Current Assignee Address: JP Akita
- Agency: Greenblum & Bernstein P.L.C.
- Priority: JP2008-313663 20081209
- Main IPC: C30B15/10
- IPC: C30B15/10 ; C03B19/09

Abstract:
A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.
Public/Granted literature
- US20100147213A1 SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2010-06-17
Information query
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