Invention Grant
- Patent Title: Film deposition apparatus
- Patent Title (中): 膜沉积装置
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Application No.: US13128908Application Date: 2009-11-13
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Publication No.: US08951347B2Publication Date: 2015-02-10
- Inventor: Hitoshi Kato , Yasushi Takeuchi
- Applicant: Hitoshi Kato , Yasushi Takeuchi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-292508 20081114; JP2009-233047 20091007; JP2009-258644 20091112
- International Application: PCT/JP2009/069398 WO 20091113
- International Announcement: WO2010/055926 WO 20100520
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/458 ; H01L21/306 ; C23F1/00 ; C23C16/06 ; C23C16/22

Abstract:
A film deposition apparatus is provided with a gas nozzle in which ejection holes that eject a reaction gas are formed along a longitudinal direction of the gas nozzle, and a flow regulation member that protrudes from the gas nozzle in either one of upstream and downstream directions of a rotation direction of a turntable. In such a configuration, a separation gas flowing from an upstream side of the rotation direction to the gas nozzle is restricted from flowing between the gas nozzle and the turntable on which a substrate is placed, and the reaction gas flowing upward from the turntable is restricted by the separation gas, thereby impeding a reaction gas concentration in a process area from being lowered.
Public/Granted literature
- US20110214611A1 FILM DEPOSITION APPARATUS Public/Granted day:2011-09-08
Information query
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