Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.