Invention Grant
US08951369B2 Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method of producing copper alloy for electronic/electric device, conductive component for electronic/electric device and terminal
有权
用于电子/电气设备的铜合金，用于电子/电气设备的铜合金薄板，用于电子/电气设备的铜合金的制造方法，用于电子/电气设备和端子的导电部件
- Patent Title: Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method of producing copper alloy for electronic/electric device, conductive component for electronic/electric device and terminal
- Patent Title (中): 用于电子/电气设备的铜合金，用于电子/电气设备的铜合金薄板，用于电子/电气设备的铜合金的制造方法，用于电子/电气设备和端子的导电部件
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Application No.: US14114862Application Date: 2013-01-04
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Publication No.: US08951369B2Publication Date: 2015-02-10
- Inventor: Kazunari Maki , Hiroyuki Mori
- Applicant: Mitsubishi Materials Corporation , Mitsubishi Shindoh Co., Ltd.
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Mitsubishi Materials Corporation,Mitsubishi Shindoh Co., Ltd.
- Current Assignee: Mitsubishi Materials Corporation,Mitsubishi Shindoh Co., Ltd.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Leason Ellis L.L.P.
- Priority: JP2012-001177 20120106; JP2012-203517 20120914
- International Application: PCT/JP2013/050004 WO 20130104
- International Announcement: WO2013/103149 WO 20130711
- Main IPC: C22C9/04
- IPC: C22C9/04 ; C22F1/08 ; H01R9/24 ; H01B1/02 ; H01R13/03
Abstract:
What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002≦Fe/Ni
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