Invention Grant
- Patent Title: Method for producing ferroelectric thin film
- Patent Title (中): 铁电薄膜的制造方法
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Application No.: US13471845Application Date: 2012-05-15
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Publication No.: US08951603B2Publication Date: 2015-02-10
- Inventor: Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Toshihiro Doi
- Applicant: Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Toshihiro Doi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Agent James E. Armstrong, IV; Nicholas J DiCeglie, Jr.
- Priority: JP2011-110682 20110517; JP2012-073404 20120328
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B32B9/04 ; H01L49/02 ; H01L21/02 ; H01L41/08 ; H01L41/318 ; H01L41/319 ; H01L21/28 ; H01L41/187

Abstract:
A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.
Public/Granted literature
- US20120295100A1 METHOD FOR PRODUCING FERROELECTRIC THIN FILM Public/Granted day:2012-11-22
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