Invention Grant
US08951710B2 Chemically amplified negative resist composition and patterning process
有权
化学放大负光刻胶组合物和图案化工艺
- Patent Title: Chemically amplified negative resist composition and patterning process
- Patent Title (中): 化学放大负光刻胶组合物和图案化工艺
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Application No.: US14450725Application Date: 2014-08-04
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Publication No.: US08951710B2Publication Date: 2015-02-10
- Inventor: Keiichi Masunaga , Daisuke Domon , Satoshi Watanabe
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-041528 20110228
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C08F220/30 ; C08F26/06 ; G03F7/20 ; G03F7/038 ; C08F214/18 ; H01L21/027
Abstract:
A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut.
Public/Granted literature
- US20140342274A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2014-11-20
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