Invention Grant
- Patent Title: Resist protective film-forming composition and patterning process
- Patent Title (中): 抗蚀保护膜形成组合物和图案化工艺
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Application No.: US14022445Application Date: 2013-09-10
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Publication No.: US08951712B2Publication Date: 2015-02-10
- Inventor: Jun Hatakeyama
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2012-202464 20120914
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/20 ; G03F7/30
Abstract:
A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer comprising recurring units derived from a styrene, indene, benzofuran or benzothiophene monomer having 1,1,1,3,3,3-hexafluoro-2-propanol, and recurring units derived from a styrene, vinylnaphthalene, indene, benzofuran, benzothiophene, stilbene, styrylnaphthalene or dinaphthylethylene monomer and an ether solvent.
Public/Granted literature
- US20140080064A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS Public/Granted day:2014-03-20
Information query
IPC分类:
