Invention Grant
- Patent Title: Vertically oriented semiconductor device and shielding structure thereof
- Patent Title (中): 垂直取向的半导体器件及其屏蔽结构
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Application No.: US14184090Application Date: 2014-02-19
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Publication No.: US08951812B2Publication Date: 2015-02-10
- Inventor: Hsiu-Ying Cho
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L23/552 ; H05K7/00 ; H01L23/522 ; H01L49/02
Abstract:
The present disclosure involves a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an electronic device positioned over the substrate. The electronic device includes an opening. The semiconductor device includes a shielding device positioned over the substrate and surrounding the electronic device. The shielding device includes a plurality of elongate members. A subset of the plurality of elongate members extend through the opening of the electronic device. At least one of the electronic device and the shielding device is formed in an interconnect structure positioned over the substrate.
Public/Granted literature
- US20140170777A1 Vertically Oriented Semiconductor Device and Shielding Structure Thereof Public/Granted day:2014-06-19
Information query
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