Invention Grant
US08951814B2 Method of fabricating a flip chip semiconductor die with internal signal access
有权
制造具有内部信号访问的倒装芯片半导体管芯的方法
- Patent Title: Method of fabricating a flip chip semiconductor die with internal signal access
- Patent Title (中): 制造具有内部信号访问的倒装芯片半导体管芯的方法
-
Application No.: US13747386Application Date: 2013-01-22
-
Publication No.: US08951814B2Publication Date: 2015-02-10
- Inventor: Brian S. Schieck , Howard Lee Marks
- Applicant: NVIDIA Corporation
- Applicant Address: US CA Santa Clara
- Assignee: NVIDIA Corporation
- Current Assignee: NVIDIA Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; G01R31/28

Abstract:
A device and method for providing access to a signal of a flip chip semiconductor die. A hole is bored into a semiconductor die to a test probe point. The hole is backfilled with a conductive material, electrically coupling the test probe point to a signal redistribution layer. A conductive bump of the signal redistribution layer is electrically coupled to a conductive contact of a package substrate. An external access point of the package substrate is electrically coupled to the conductive contact, such that signals of the flip chip semiconductor die are accessible for measurement at the external access point.
Public/Granted literature
- US20130221354A1 FLIP CHIP SEMICONDUCTOR DIE INTERNAL SIGNAL ACCESS SYSTEM AND METHOD Public/Granted day:2013-08-29
Information query