Invention Grant
- Patent Title: Method for producing liquid-discharge-head substrate
- Patent Title (中): 液体排出头基板的制造方法
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Application No.: US13526958Application Date: 2012-06-19
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Publication No.: US08951815B2Publication Date: 2015-02-10
- Inventor: Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
- Applicant: Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A. Inc., IP Division
- Priority: JP2011-137731 20110621; JP2012-112719 20120516
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B41J2/16

Abstract:
A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.
Public/Granted literature
- US20120329181A1 METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE Public/Granted day:2012-12-27
Information query
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