Invention Grant
US08951830B2 Process for producing an organic semiconductor layer consisting of a mixture of a first and a second semiconductor
有权
用于制造由第一和第二半导体的混合物组成的有机半导体层的方法
- Patent Title: Process for producing an organic semiconductor layer consisting of a mixture of a first and a second semiconductor
- Patent Title (中): 用于制造由第一和第二半导体的混合物组成的有机半导体层的方法
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Application No.: US13713435Application Date: 2012-12-13
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Publication No.: US08951830B2Publication Date: 2015-02-10
- Inventor: Mohammed Benwadih
- Applicant: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Burr & Brown, PLLC
- Priority: FR1055990 20100722
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L51/00 ; H01L51/42
Abstract:
A method for manufacturing an organic semiconductor layer formed of a mixture of a first and of a second organic semiconductor materials includes the steps of: forming a porous solid volume formed of the first semiconductor material, of intercommunicating porosity and capable of receiving a second semiconductor material; depositing, at least on an external surface of the porous solid volume, a liquid including the second semiconductor material dissolved or dispersed in a solvent, the solvent being inert with respect to the first semiconductor material and having an evaporation temperature lower than the evaporation temperature of the second semiconductor material; and once the porous solid volume has been at least partially impregnated with the liquid, evaporating the solvent by heating up to a temperature higher than the evaporation temperature of said solvent and lower than the evaporation temperature of the first and of the second semiconductor materials.
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