Invention Grant
- Patent Title: Semiconductor device and production method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14023712Application Date: 2013-09-11
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Publication No.: US08951905B2Publication Date: 2015-02-10
- Inventor: Yutaka Onozuka , Hiroshi Yamada , Kazuhiko Itaya
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-219068 20121001
- Main IPC: H01L29/30
- IPC: H01L29/30 ; H01L23/48 ; H01L23/495 ; H01L21/78 ; H01L23/00 ; H01L23/498 ; H01L23/538 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device according to an embodiment includes: a first unit device configured to include a semiconductor chip, a backside electrode that is in contact with a backside of the semiconductor chip, and a bonding wire in which one end is connected to the backside electrode; a second unit device configured to have a function different from that of the first unit device; a resin layer configured to fix the first and second unit devices to each other; and a first wiring that is formed on the resin layer on a surface side of the semiconductor chip and connected to the other end of the bonding wire.
Public/Granted literature
- US20140091447A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF Public/Granted day:2014-04-03
Information query
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