One or more integrated circuit structures and techniques for forming such integrated circuit structures are provided. The integrated circuit structures comprise a conductive structure that is formed within a trench in a dielectric layer on a substrate. The conductive structure is formed over a barrier layer formed within the trench, or the conductive structure is formed over a liner formed over the barrier layer. At least some of the dielectric layer, the barrier layer, the liner and the conductive structure are removed, for example, by chemical mechanical polishing, such that a step height exists between a top surface of the substrate and a top surface of the dielectric layer. Removing these layers in this manner removes areas where undesired interlayer peeling is likely to occur. A conductive cap is formed on the conductive structure.