Methods for fabricating and forming semiconductor device structures including damascene structures

Invention Grant

US08951910B2 Methods for fabricating and forming semiconductor device structures including damascene structures 有权

Title translation: 用于制造和形成包括镶嵌结构的半导体器件结构的方法

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Patent Title: Methods for fabricating and forming semiconductor device structures including damascene structures
Patent Title (中): 用于制造和形成包括镶嵌结构的半导体器件结构的方法
Application No.: US13915210

Application Date: 2013-06-11
Publication No.: US08951910B2

Publication Date: 2015-02-10
Inventor: Howard E. Rhodes
Applicant: Micron Technology, Inc.
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/44

Methods for fabricating and forming semiconductor device structures including damascene structures

Abstract:

A method and apparatus for providing a conductive structure adjacent to a damascene conductive structure in a semiconductor device structure. The semiconductor device structure includes an insulation layer with at least one damascene conductive structure formed therein, wherein the at least one damascene conductive structure includes an insulative, protective layer disposed thereon. The insulative material of the protective layer is able to resist removal by at least some suitable etchants for the insulative material of the insulation layer adjacent to the at least one damascene conductive structure. A self-aligned opening is formed by removing a portion of an insulation layer adjacent the at least one damascene conductive structure. The self-aligned opening is then filled with a conductive material to thereby provide another conductive structure adjacent to the at least one damascene conductive structure.

Abstract(Chinese):

一种用于在半导体器件结构中提供与大马士革导电结构相邻的导电结构的方法和装置。半导体器件结构包括其中形成有至少一个镶嵌导电结构的绝缘层，其中至少一个镶嵌导电结构包括设置在其上的绝缘保护层。保护层的绝缘材料能够抵抗与至少一个镶嵌导电结构相邻的绝缘层的绝缘材料的至少一些合适的蚀刻剂的去除。通过去除与所述至少一个镶嵌导电结构相邻的绝缘层的一部分来形成自对准开口。然后用导电材料填充自对准开口，从而提供与至少一个镶嵌导电结构相邻的另一导电结构。

Public/Granted literature

US20130277721A1 METHODS FOR DESIGNING SEMICONDUCTOR DEVICE STRUCTURES AND RELATED SEMICONDUCTOR STRUCTURES INCLUDING DAMASCENE STRUCTURES Public/Granted day:2013-10-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）