Invention Grant
US08952313B2 Semiconductor device having direct connecting structure including first detector, second detector, first transistor, and second transistor elements
有权
具有包括第一检测器，第二检测器，第一晶体管和第二晶体管元件的直接连接结构的半导体器件
- Patent Title: Semiconductor device having direct connecting structure including first detector, second detector, first transistor, and second transistor elements
- Patent Title (中): 具有包括第一检测器，第二检测器，第一晶体管和第二晶体管元件的直接连接结构的半导体器件
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Application No.: US13543146Application Date: 2012-07-06
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Publication No.: US08952313B2Publication Date: 2015-02-10
- Inventor: Hikaru Tamura
- Applicant: Hikaru Tamura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-156679 20110715
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01J40/14 ; H01L27/146
Abstract:
The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column.
Public/Granted literature
- US20130015326A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME Public/Granted day:2013-01-17
Information query
IPC分类:
