Invention Grant
- Patent Title: Techniques for processing photoresist features using ions
- Patent Title (中): 使用离子处理光刻胶特征的技术
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Application No.: US13829979Application Date: 2013-03-14
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Publication No.: US08952344B2Publication Date: 2015-02-10
- Inventor: Frank Sinclair , Ludovic Godet , Patrick M. Martin , Armah Kpissay
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates
- Current Assignee: Varian Semiconductor Equipment Associates
- Current Assignee Address: US MA Gloucester
- Agency: Kacvinsky Daisak Bluni PLLC
- Main IPC: G21K5/04
- IPC: G21K5/04 ; G03F7/00

Abstract:
A method of treating a substrate includes directing first ions over a first range of angles to one or more photoresist features disposed on the substrate, the first ions effective to generate an altered layer in the one or more photoresist features, the altered surface layer encapsulating an inner portion of the one or more photoresist features, and directing second ions different from the first ions over a second range of angles to the one or more photoresist features, the second ions effective to generate gaseous species in the inner regions of the one or more photoresist features.
Public/Granted literature
- US20140272728A1 TECHNIQUES FOR PROCESSING PHOTORESIST FEATURES USING IONS Public/Granted day:2014-09-18
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