Invention Grant
US08952348B2 Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
有权
非易失性存储器件，非易失性存储器件组及其制造方法
- Patent Title: Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
- Patent Title (中): 非易失性存储器件，非易失性存储器件组及其制造方法
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Application No.: US13943850Application Date: 2013-07-17
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Publication No.: US08952348B2Publication Date: 2015-02-10
- Inventor: Jun Sumino , Motonari Honda
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2010-230170 20101013
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/20 ; H01L45/00 ; H01L43/08 ; H01L43/10 ; H01L27/22 ; H01L27/24
Abstract:
A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity.
Public/Granted literature
- US20130341582A1 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE GROUP, AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-12-26
Information query
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