Invention Grant
- Patent Title: Thin film transistor, and method of manufacturing the same
- Patent Title (中): 薄膜晶体管及其制造方法
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Application No.: US13049547Application Date: 2011-03-16
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Publication No.: US08952376B2Publication Date: 2015-02-10
- Inventor: Je-Hun Lee , Joo-Han Kim
- Applicant: Je-Hun Lee , Joo-Han Kim
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0031415 20100406
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L31/00 ; H01L29/786 ; H01L27/12
Abstract:
A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a first gate electrode and an active layer including a crystalline oxide semiconductor which is insulated from the first gate electrode by a first insulating layer and the active layer is arranged to overlap the first gate electrode. A source electrode is formed including at least a portion overlaps the active layer, and a drain electrode is arranged being spaced apart from the source electrode and at least a portion of the drain electrode overlaps the active layer, wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer.
Public/Granted literature
- US20110240987A1 THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-10-06
Information query
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