Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13608044Application Date: 2012-09-10
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Publication No.: US08952379B2Publication Date: 2015-02-10
- Inventor: Shunpei Yamazaki , Atsuo Isobe , Hiromachi Godo , Takehisa Hatano , Sachiaki Tezuka , Suguru Hondo , Naoto Yamade , Junichi Koezuka
- Applicant: Shunpei Yamazaki , Atsuo Isobe , Hiromachi Godo , Takehisa Hatano , Sachiaki Tezuka , Suguru Hondo , Naoto Yamade , Junichi Koezuka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-203649 20110916; JP2011-216445 20110930
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/417 ; H01L29/786
Abstract:
Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.
Public/Granted literature
- US20130069055A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-03-21
Information query
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