Invention Grant
- Patent Title: Light emitting diode and method for fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US13471154Application Date: 2012-05-14
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Publication No.: US08952389B2Publication Date: 2015-02-10
- Inventor: Joon-seop Kwak , Jae-hee Cho
- Applicant: Joon-seop Kwak , Jae-hee Cho
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2002-0052462 20020902
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/50 ; H01L33/20

Abstract:
A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
Public/Granted literature
- US20120223326A1 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-09-06
Information query
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