Invention Grant
- Patent Title: Silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件
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Application No.: US14176966Application Date: 2014-02-10
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Publication No.: US08952393B2Publication Date: 2015-02-10
- Inventor: Keiji Wada , Takeyoshi Masuda , Toru Hiyoshi
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2013-047790 20130311
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L29/78
Abstract:
A first drift layer has a first surface facing a first electrode and electrically connected to a first electrode, and a second surface opposite to the first surface. The first drift layer has an impurity concentration NA. A relaxation region is provided in a portion of the second surface of the first drift layer. The first drift layer and the second drift layer form a drift region in which the relaxation region is buried. The second drift layer has an impurity concentration NB, NB>NA being satisfied. A body region, a source region, and a second electrode are provided on the second drift layer.
Public/Granted literature
- US20140252374A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2014-09-11
Information query
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