Invention Grant
US08952413B2 Etched trenches in bond materials for die singulation, and associated systems and methods
有权
用于模具切割的粘合材料中的蚀刻沟槽,以及相关系统和方法
- Patent Title: Etched trenches in bond materials for die singulation, and associated systems and methods
- Patent Title (中): 用于模具切割的粘合材料中的蚀刻沟槽,以及相关系统和方法
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Application No.: US13415677Application Date: 2012-03-08
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Publication No.: US08952413B2Publication Date: 2015-02-10
- Inventor: Vladimir Odnoblyudov , Scott D. Schellhammer , Jeremy S. Frei
- Applicant: Vladimir Odnoblyudov , Scott D. Schellhammer , Jeremy S. Frei
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00

Abstract:
Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
Public/Granted literature
- US20130234193A1 ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2013-09-12
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