Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
-
Application No.: US13668682Application Date: 2012-11-05
-
Publication No.: US08952414B2Publication Date: 2015-02-10
- Inventor: Hwan Hee Jeong
- Applicant: LG Innotek Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2008-0095777 20080930; KR10-2008-0105256 20081027; KR10-2008-0116524 20081121
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L33/44 ; H01L33/20 ; H01L33/00 ; H01L33/38 ; H01L33/46

Abstract:
A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion on an inner portion of a top surface of the light emitting structure; and an electrode under the light emitting structure, wherein the inner portion of the electrode layer is protruded to the light emitting structure relative to the outer portion of the electrode layer, and wherein a portion of the insulating layer surrounds a portion of the light emitting structure.
Public/Granted literature
- US20130056789A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-03-07
Information query
IPC分类: