Invention Grant
- Patent Title: Nonvolatile semiconductor storage device and method of manufacture thereof
- Patent Title (中): 非易失性半导体存储装置及其制造方法
-
Application No.: US13607508Application Date: 2012-09-07
-
Publication No.: US08952439B2Publication Date: 2015-02-10
- Inventor: Ryota Suzuki
- Applicant: Ryota Suzuki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2012-067402 20120323
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/76 ; H01L29/792 ; H01L21/3205
Abstract:
A nonvolatile semiconductor storage device includes a semiconductor substrate on which an element isolation groove is formed, memory cells each including a gate electrode having a charge storage layer, an interelectrode insulating film, and a control electrode, that is formed on the semiconductor substrate via a tunnel insulating film, and an insulating film disposed in the element isolation groove. The interelectrode insulating film is formed to have a first portion above the insulating film that is separated from one of the insulating film and the control electrode by an air gap and a second portion above the charge storage layer that is separated from the charge storage layer by a cavity.
Public/Granted literature
- US20130248969A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2013-09-26
Information query
IPC分类:
