According to one embodiment, a device includes a first fin structure having first to n-th semiconductor layers (n is a natural number equal to or more than 2) stacked in a first direction perpendicular to a surface of a semiconductor substrate, and extending in a second direction parallel to the surface of the semiconductor substrate, first to n-th memory cells provided on surfaces of the first to n-th semiconductor layers in a third direction perpendicular to the first and second directions respectively, and first to n-th select transistors connected in series to the first to n-th memory cells respectively.