Invention Grant
- Patent Title: Multiple-time programming memory cells and methods for forming the same
- Patent Title (中): 多时间编程存储单元及其形成方法
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Application No.: US14316259Application Date: 2014-06-26
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Publication No.: US08952442B2Publication Date: 2015-02-10
- Inventor: Ching-Hung Fu , Chun-Yao Ko , Tuo-Hsin Chien , Ting-Chen Hsu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/76 ; H01L21/336 ; H01L21/762 ; H01L29/66 ; H01L27/115 ; H01L29/423
Abstract:
A method includes forming Shallow Trench Isolation (STI) regions to separate a first active region and a second active region of a semiconductor substrate from each other, etching a portion of the STI regions that contacts a sidewall of the second active region to form a recess, and implanting a top surface layer and a side surface layer of the second active region to form an implantation region. The side surface layer of the second active region extends from the sidewall of the second active region into the second active region. An upper portion of the top surface layer and an upper portion of the side surface layer are oxidized to form a capacitor insulator. A floating gate is formed to extend over the first active region and the second active region. The floating gate includes a portion extending into the recess.
Public/Granted literature
- US20140308798A1 Multiple-Time Programming Memory Cells and Methods for Forming the Same Public/Granted day:2014-10-16
Information query
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