Invention Grant
- Patent Title: Semiconductor device having both IGBT area and diode area
- Patent Title (中): 具有IGBT面积和二极管面积的半导体器件
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Application No.: US13210624Application Date: 2011-08-16
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Publication No.: US08952449B2Publication Date: 2015-02-10
- Inventor: Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
- Applicant: Masaki Koyama , Yasushi Ookura , Akitaka Soeno , Tatsuji Nagaoka , Takahide Sugiyama , Sachiko Aoi , Hiroko Iguchi
- Applicant Address: JP Toyota-Shi
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Toyota-Shi
- Agency: Kenyon & Kenyon LLP
- Priority: JP2010-182357 20100817
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/861 ; H01L21/263 ; H01L21/266 ; H01L29/08 ; H01L29/32 ; H01L29/739 ; H01L21/265
Abstract:
There is known a semiconductor device in which an IGBT structure is provided in an IGBT area and a diode structure is provided in a diode area, the IGBT area and the diode area are both located within a same substrate, and the IGBT area is adjacent to the diode area. In this type of semiconductor device, a phenomenon that carriers accumulated within the IGBT area flow into the diode area when the IGBT structure is turned off. In order to prevent this phenomenon, a region of shortening lifetime of carriers is provided at least in a sub-area that is within said IGBT area and adjacent to said diode area. In the sub-area, emitter of IGBT structure is omitted.
Public/Granted literature
- US20120043582A1 SEMICONDUCTOR DEVICE HAVING BOTH IGBT AREA AND DIODE AREA Public/Granted day:2012-02-23
Information query
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