Invention Grant
- Patent Title: Memory cell device and method of manufacture
- Patent Title (中): 存储单元装置及其制造方法
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Application No.: US13832761Application Date: 2013-03-15
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Publication No.: US08952493B2Publication Date: 2015-02-10
- Inventor: Sandra Mege
- Applicant: Adesto Technology Corporation
- Applicant Address: US CA Sunnyvale US CA Sunnyvale
- Assignee: Adesto Technologies Corporation,Artemis Acquisition LLC
- Current Assignee: Adesto Technologies Corporation,Artemis Acquisition LLC
- Current Assignee Address: US CA Sunnyvale US CA Sunnyvale
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L45/00 ; G11C13/00 ; H01L27/24
Abstract:
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.
Public/Granted literature
- US20130200329A1 MEMORY CELL DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2013-08-08
Information query
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