Invention Grant
US08952498B2 Semiconductor device having plural stacked chips 有权
具有多个堆叠芯片的半导体装置

Semiconductor device having plural stacked chips
Abstract:
Disclosed herein is a device including a substrate and first and second chips stacked on the substrate. The first and second chips have penetration electrodes that are penetrating therethrough. Power terminals of the first and second chips are connected to each other and arranged in a first arrangement pitch. Signal terminals of the first and second chips are connected to each other and arranged in a second arrangement pitch that is smaller than the first arrangement pitch.
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