Invention Grant
US08952542B2 Method for dicing a semiconductor wafer having through silicon vias and resultant structures 有权
用于通过硅通孔和所得结构切割半导体晶片的方法

Method for dicing a semiconductor wafer having through silicon vias and resultant structures
Abstract:
The present invention provides a semiconductor device, a semiconductor package and a semiconductor process. The semiconductor process includes the following steps: (a) providing a semiconductor wafer having a first surface, a second surface and a passivation layer; (b) applying a first laser on the passivation layer to remove a part of the passivation layer and expose a part of the semiconductor wafer; (c) applying a second laser, wherein the second laser passes through the exposed semiconductor wafer and focuses at an interior of the semiconductor wafer; and (d) applying a lateral force to the semiconductor wafer. Whereby, the cutting quality is ensured.
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