Invention Grant
US08952547B2 Semiconductor device with contact structure with first/second contacts formed in first/second dielectric layers and method of forming same
有权
具有在第一/第二电介质层中形成的具有第一/第二触点的接触结构的半导体器件及其形成方法
- Patent Title: Semiconductor device with contact structure with first/second contacts formed in first/second dielectric layers and method of forming same
- Patent Title (中): 具有在第一/第二电介质层中形成的具有第一/第二触点的接触结构的半导体器件及其形成方法
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Application No.: US11775039Application Date: 2007-07-09
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Publication No.: US08952547B2Publication Date: 2015-02-10
- Inventor: Jhon-Jhy Liaw
- Applicant: Jhon-Jhy Liaw
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L27/11 ; H01L23/522 ; H01L23/528 ; H01L23/485 ; H01L27/02
Abstract:
A contact structure includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer connecting to a gate region of a MOS transistor or to a first contact. A butted contact structure abutting a source/drain region and a gate electrode includes a first contact formed in a first dielectric layer connecting to the source/drain region of a MOS transistor, and a second contact formed in a second dielectric layer with one end resting on the gate electrode and the other end in contact with the first contact.
Public/Granted literature
- US20090014796A1 Semiconductor Device with Improved Contact Structure and Method of Forming Same Public/Granted day:2009-01-15
Information query
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