The present teaching provides a semiconductor device capable of relaxing stress transferred to a contact region during wire bonding and improving reliability of wire bonding. A semiconductor device comprises contact regions, an interlayer insulating film, an emitter electrode, and a stress relaxation portion. The contact regions are provided at a certain interval in areas exposing at a surface of a semiconductor substrate. The interlayer insulating film is provided on the surface of the semiconductor substrate between adjacent contact regions. The emitter electrode is provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions. The stress relaxation portion is provided on an upper surface of the emitter electrode in an area only above the contact regions. The stress relaxation portion is formed of a conductive material. A Young's modulus of the material of the stress relaxation portion is lower than a Young's modulus of the material of the emitter electrode.