Invention Grant
US08952716B2 Method of detecting defects in a semiconductor device and semiconductor device using the same
有权
用于检测半导体器件中的缺陷的方法和使用其的半导体器件
- Patent Title: Method of detecting defects in a semiconductor device and semiconductor device using the same
- Patent Title (中): 用于检测半导体器件中的缺陷的方法和使用其的半导体器件
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Application No.: US13416098Application Date: 2012-03-09
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Publication No.: US08952716B2Publication Date: 2015-02-10
- Inventor: Yong Min Cho , Dong-Ryul Lee
- Applicant: Yong Min Cho , Dong-Ryul Lee
- Applicant Address: KR Suwon-si, Gyeongg-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeongg-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0038609 20110425
- Main IPC: G01R31/327
- IPC: G01R31/327 ; G11C29/02 ; H01L27/108 ; G01R31/28 ; G01R31/307 ; G11C11/40 ; H01L21/66 ; H01L49/02 ; G11C29/50
Abstract:
A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.
Public/Granted literature
- US20120268159A1 METHOD OF DETECTING DEFECTS IN A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2012-10-25
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