Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13805287Application Date: 2011-06-13
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Publication No.: US08952721B2Publication Date: 2015-02-10
- Inventor: Takashi Ishiguro , Masayuki Sato , Tetsuo Hironaka , Hitoshi Shimazaki
- Applicant: Takashi Ishiguro , Masayuki Sato , Tetsuo Hironaka , Hitoshi Shimazaki
- Applicant Address: JP Tokyo
- Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Chen Yoshimura LLP
- Priority: JP2010-144237 20100624; JP2010-144238 20100624; JP2010-144240 20100624; JP2011-012427 20110124
- International Application: PCT/JP2011/063461 WO 20110613
- International Announcement: WO2011/162116 WO 20111229
- Main IPC: H03K19/173
- IPC: H03K19/173 ; G11C8/10 ; G11C7/00 ; H03K19/177

Abstract:
Disclosed is a semiconductor device which is intended to reduce the total number of storage element blocks that constitute a desired logic circuit. The semiconductor device includes N address lines (N is an integer equal to two or more), N data lines, and a plurality of storage sections. Each of the storage sections includes an address decoder for decoding an address supplied via the N address lines to output a word select signal to word lines; and a plurality of storage elements which are connected to the word lines and the data lines, each store data that constitute a truth table, and input or output the data via the data lines in accordance with the word select signal supplied via the word lines. The semiconductor device is adapted such that the N address lines for the storage sections are connected to the respective data lines of other N ones of the storage sections, while the N data lines for the storage sections are connected to the respective address lines of other N ones of the storage sections.
Public/Granted literature
- US20130100750A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-04-25
Information query
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