Invention Grant
- Patent Title: Voltage controlled switching element gate drive circuit
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Application No.: US14489861Application Date: 2014-09-18
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Publication No.: US08952731B2Publication Date: 2015-02-10
- Inventor: Satoshi Sugahara
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kawasaki-Shi
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-116924 20110525
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/16 ; H03K17/687

Abstract:
A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.
Public/Granted literature
- US08994414B2 Voltage controlled switching element gate drive circuit Public/Granted day:2015-03-31
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