Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
-
Application No.: US13705090Application Date: 2012-12-04
-
Publication No.: US08952755B2Publication Date: 2015-02-10
- Inventor: Yoo Hwan Kim , Yoo Sam Na , Hyeon Seok Hwang , Byeong Hak Jo , Hyun Hwan Yoo
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Bracewell & Giuliani LLP
- Agent Brad Chin
- Priority: KR10-2011-0129134 20111205
- Main IPC: H03G3/20
- IPC: H03G3/20 ; H03F3/21 ; H03F1/52

Abstract:
Disclosed herein is a circuit for preventing an element from being damaged although output impedance of a final transistor is changed in a power amplifier. The power amplifier includes: a power stage amplifying a signal; a transformer connected to an output terminal of the power stage and coupling a signal output from the power stage; and a controller controlling a bias voltage from the power stage according to the coupled signal. Although output impedance is changed, damage to the power amplifier can be prevented. Also, the power amplifier can be automatically controlled to maintain performance thereof by sensing an operational state in which output impedance is normal.
Public/Granted literature
- US20130141167A1 POWER AMPLIFIER Public/Granted day:2013-06-06
Information query