Invention Grant
US08953163B2 Exposure apparatus, exposure method, and method of manufacturing semiconductor device
有权
曝光装置,曝光方法以及制造半导体装置的方法
- Patent Title: Exposure apparatus, exposure method, and method of manufacturing semiconductor device
- Patent Title (中): 曝光装置,曝光方法以及制造半导体装置的方法
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Application No.: US13779209Application Date: 2013-02-27
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Publication No.: US08953163B2Publication Date: 2015-02-10
- Inventor: Kentaro Kasa , Manabu Takakuwa , Yosuke Okamoto , Masamichi Kishimoto
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2012-196401 20120906
- Main IPC: G01B11/00
- IPC: G01B11/00 ; G03F7/20

Abstract:
An exposure apparatus according to an embodiment controls the positioning between layers using an alignment correction value calculated on the basis of lower layer position information of a lower-layer-side pattern and upper layer position information of an upper-layer-side pattern. The lower layer position information includes alignment data, a focus map, and a correction value which is set on the basis of the previous substrate. The upper layer position information includes alignment data, a focus map, and a correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred.
Public/Granted literature
- US20140065528A1 EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-03-06
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